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 T2322B Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed primarily for ac power switching. The gate sensitivity of these triacs permits the use of economical transistorized or integrated circuit control circuits, and it enhances their use in low-power phase control and load-switching applications.
Features
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* * * * *
Very High Gate Sensitivity Low On-State Voltage at High Current Levels Glass-Passivated Chip for Stability Small, Rugged Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability Pb-Free Package is Available*
TRIACS 2.5 AMPERES RMS 200 VOLTS
MT2 G
MT1
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Peak Repetitive Off-State Voltage (Note 1) (TJ = 25 to 110C, Gate Open) On-State RMS Current (TC = 70C) (Full Cycle Sine Wave 50 to 60 Hz) Peak Non-Repetitive Surge Current (One Full Cycle, Sine Wave 60 Hz, TC = 70C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width 10 ms, TC = 70C) Average Gate Power (t = 8.3 ms, TC = 70C) Peak Gate Current (Pulse Width = 10 ms, TC = 70C) Operating Junction Temperature Range Storage Temperature Range Mounting Torque (6-32 Screw) (Note 2) Symbol VDRM, VRRM IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg - Value 200 2.5 25 2.6 10 0.5 0.5 -40 to +110 -40 to +150 8.0 Unit V A 3 A A2s W W A C C in. lb. Y WW T2322B G = Year = Work Week = Device Code = Pb-Free Package YWW T 2322BG 21 TO-225AA (formerly TO-126) CASE 077 STYLE 5
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Torque rating applies with use of torque washer (Shakeproof WD19523 or equivalent). Mounting Torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and heat-sink contact pad are common.
PIN ASSIGNMENT
1 2 3 Main Terminal 1 Main Terminal 2 Gate
ORDERING INFORMATION
Device T2322B *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
Package TO225AA TO225AA (Pb-Free)
Shipping 500 Units/Box 500 Units/Box
T2322BG
1
May, 2006 - Rev. 5
Publication Order Number: T2322/D
T2322B
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Sec Symbol RqJC RqJA TL Max 3.5 60 260 Unit C/W C/W C
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted; Electricals apply in both directions)
Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) ON CHARACTERISTICS Peak On-State Voltage (Note 3) (ITM = "10 A) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) All Quadrants Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 W, TC = 25C) Gate Non-Trigger Voltage (VD = 12 V, RL = 100 W, TC = 110C) Holding Current (VD = 12 V, IT (Initiating Current) = "200 mA, Gate Open) Gate Controlled Turn-On Time (VD = Rated VDRM, ITM = 10 A pk, IG = 60 mA, tr = 0.1 msec) DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, TC = 100C) Critical Rate-of-Rise of Commutation Voltage (VD = Rated VDRM, ITM = 3.5 A pk, Commutating di/dt = 1.26 A/ms, Gate Unenergized, TC = 90C) 3. Pulse Test: Pulse Width 1.0 ms, Duty Cycle 2%. dv/dt dv/dt(c) 10 1.0 100 4.0 - - V/ms V/ms VTM IGT - - 1.7 - 2.2 10 V mA TJ = 25C TJ = 110C IDRM, IRRM - - - 0.2 10 0.75 mA mA Symbol Min Typ Max Unit
VGT VGD IH tgt
- 0.15 - -
1.0 - 15 1.8
2.2 - 30 2.5
V V mA ms
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2
T2322B
Voltage Current Characteristic of Triacs (Bidirectional Device)
+ Current Quadrant 1 MainTerminal 2 +
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current Quadrant 3 MainTerminal 2 - IH VTM IRRM at VRRM on state IH
VTM
off state
+ Voltage IDRM at VDRM
Quadrant Definitions for a Triac
MT2 POSITIVE (Positive Half Cycle) +
(+) MT2
(+) MT2
Quadrant II
(-) IGT GATE MT1 REF
(+) IGT GATE MT1 REF
Quadrant I
IGT - (-) MT2 (-) MT2
+ IGT
Quadrant III
(-) IGT GATE MT1 REF
(+) IGT GATE MT1 REF
Quadrant IV
- MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used.
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3
T2322B
PACKAGE DIMENSIONS
TO-225 CASE 77-09 ISSUE Z
-B- U Q
F M
C
-A-
123
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 ---
H
K
V G S D 2 PL 0.25 (0.010)
M
J R 0.25 (0.010) A
M
A
M
M
B
M
B
M
DIM A B C D F G H J K M Q R S U V
STYLE 5: PIN 1. MT 1 2. MT 2 3. GATE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
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4
T2322/D


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